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r09ds0011ej0100 rev.1.00 page 1 of 10 jan 21, 2011 data sheet NE3509M14 n-channel gaas hj-fet, l to c band low noise amplifier features ? super low noise figure and high associated gain high isolation nf = 0.4 db typ., g a = 18.5 db typ. @ v ds = 2 v, i d = 10 ma, f = 2 ghz ? 4-pin lead-less minimold (m 14, 1208 pkg) package applications ? satellite radio (sdars, dmb, dab, etc.) antenna lna ? gps antenna lna ? low noise amplifier for micr owave communication system ordering information part number order number package quantity marking supplying form NE3509M14-t3 NE3509M14-t3-a 4-pin lead-less minimold (m14, 1208 pkg) (pb-free) 10 kpcs/reel zr ? embossed tape 8 mm wide ? pin 1 (drain), pin 4 (source) face the perforation side of the tape remark to order evaluation samples, please contact your nearby sales office. part number for sample order: NE3509M14 absolute maximum ratings (t a = +25 c, unless otherwise specified) parameter symbol ratings unit drain to source voltage v ds 4.0 v gate to source voltage v gs ? 3.0 v drain current i d i dss ma gate current i g 200 a total power dissipation note p tot 150 mw channel temperature t ch +150 c storage temperature t stg ? 65 to +150 c note: mounted on 1.08 cm 2 1.0 mm (t) glass epoxy pwb caution observe precautions when handling because these devi ces are sensitive to electrostatic discharge. r09ds0011ej0100 rev.1.00 jan 21, 2011
NE3509M14 r09ds0011ej0100 rev.1.00 page 2 of 10 jan 21, 2011 recommended operating range (t a = +25 c, unless otherwise specified) parameter symbol min. typ. max. unit drain to source voltage v ds ? 2 3 v drain current i d ? 10 20 ma input power p in ? ? 0 dbm electrical characteristics (t a = +25 c, unless otherwise specified) parameter symbol test conditi ons min. typ. max. unit gate to source leak current i gso v gs = ? 3.0 v ? 0.5 10 a saturated drain current i dss v ds = 2 v, v gs = 0 v 30 45 60 ma gate to source cutoff voltage v gs (off) v ds = 2 v, i d = 50 a ? 0.25 ? 0.50 ? 0.75 v trans conductance g m v ds = 2 v, i d = 10 ma 80 ? ? ms noise figure nf ? 0.4 0.7 db associated gain g a v ds = 2 v, i d = 10 ma, f = 2 ghz 16.5 18.5 ? db standard characteristics for reference (t a = +25 c, unless otherwise specified) parameter symbol test conditions reference value unit gain 1 db compression output power p o (1 db) f = 2 ghz, v ds = 2 v, i d = 10 ma set (non-rf) +11 dbm
NE3509M14 r09ds0011ej0100 rev.1.00 page 3 of 10 jan 21, 2011 typical characteristics (t a = +25 c, unless otherwise specified) total power dissipation p tot (mw) ambient temperature t a ( c) vs. ambient temperature total power dissipation 250 200 150 100 50 0 50 100 150 200 250 mounted on glass epoxy pcb (1.08 cm 2 1.0 mm (t) ) drain current i d (ma) gate to source voltage v gs (v) drain current vs. gate to source voltage v ds = 2 v 50 45 40 35 30 25 20 15 10 5 0 ?1.0 ?0.8 ?0.6 ?0.4 ?0.2 0 drain current i d (ma) drain to source voltage v ds (v) drain to source voltage drain current vs. 100 20 40 60 80 0 12345 v gs = 0 v ? 0.2 v ? 0.3 v ? 0.1 v ? 0.4 v ? 0.5 v frequency f (ghz) minimum noise figure nf min (db) associated gain g a (db) associated gain vs. frequency minimum noise figure, 2.0 1.2 1.4 1.6 1.8 0.6 0.8 1.0 0.2 0.4 0.0 20 6 8 10 12 14 18 4 2 16 0 0 5 10 15 nf min g a v ds = 2 v i d = 10 ma drain current i d (ma) minimum noise figure nf min (db) associated gain g a (db) associated gain vs. drain current minimum noise figure, 2.0 1.2 1.4 1.6 1.8 0.6 0.8 1.0 0.2 0.4 0.0 20 6 8 10 12 14 18 4 2 16 0 0 5 10 15 20 25 30 35 40 f = 2 ghz v ds = 2 v nf min g a drain voltage v ds (v) minimum noise figure nf min (db) associated gain g a (db) associated gain vs. drain voltage minimum noise figure, 2.0 1.2 1.4 1.6 1.8 0.6 0.8 1.0 0.2 0.4 0.0 20 6 8 10 12 14 18 4 2 16 0 1.0 1.5 2.0 2.5 3.0 3.5 nf min g a f = 2 ghz, i d = 10 ma remark the graphs indicate nominal characteristics.
NE3509M14 r09ds0011ej0100 rev.1.00 page 4 of 10 jan 21, 2011 frequency f (ghz) mag, msg, k factor vs. frequency maximum available power gain mag (db) maximum stable power gain msg (db) 25 20 15 10 5 0 0 5 10 15 20 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 mag msg k factor k factor v ds = 2 v, i d = 10 ma frequency f (ghz) insertion power gain, isolation vs. frequency insertion power gain |s 21 | 2 (db) 0 ?5 ?10 ?15 ?20 ?25 isolation |s 12 | 2 (db) 25 20 15 10 5 0 0 5 10 15 20 v ds = 2 v, i d = 10 ma |s 21 | 2 |s 12 | 2 remark the graphs indicate nominal characteristics.
NE3509M14 r09ds0011ej0100 rev.1.00 page 5 of 10 jan 21, 2011 output power, g p , i d , i g vs. input power output power p out (dbm) power gain g p (db) input power p in (dbm) drain current i d (ma) gate current i g (ma) 25 20 15 10 5 0 ?5 ?10 ?15 80 70 60 50 40 30 20 10 0 p out i d ? 25 ? 20 ? 15 ? 10 ? 50 51015 i g g p f = 2 ghz, v ds = 2 v, i d = 10 ma set, p o (1 db) optimize output power, im 3 , i d , i g vs. input power output power p out (2 tone) (dbm) 3rd order intermodulation distortion im 3 (1 tone) (dbm) input power p in (2 tone) (dbm) drain current i d (ma) gate current i g (ma) 30 20 10 0 ? 10 ? 20 ? 30 ? 40 ? 50 ? 60 ? 70 100 90 80 70 60 50 40 30 20 10 0 ? 25 ? 20 ? 15 ? 10 ? 50 51015 f1 = 2 000 mhz f2 = 2 001 mhz p out im 3 (l) im 3 (h) i d i g v ds = 2 v, i d = 10 ma set, p o (1 db) optimize remark the graphs indicate nominal characteristics.
NE3509M14 r09ds0011ej0100 rev.1.00 page 6 of 10 jan 21, 2011 s-parameters s-parameters and noise parameters are provided on our web s ite in a format (s2p) that en ables the direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. click here to download s-parameters. [rf and microwave] [device parameters] url http://www2.renesas.com/microwave/en/download.html
NE3509M14 r09ds0011ej0100 rev.1.00 page 7 of 10 jan 21, 2011 mounting pad layout dimensions 4-pin lead-less mini-mold (m 14, 1208 pkg) (unit: mm) 0.8 0.8 0.45 0.25 remark the mounting pad layout in this document is for reference only.
NE3509M14 r09ds0011ej0100 rev.1.00 page 8 of 10 jan 21, 2011 package dimensions 4-pin lead-less mini-mold (m 14, 1208 pkg) (unit: mm) 0.50.05 0.11 +0.1 ?0.05 (0.6) 0.2 0.2 1.2 +0.07 ?0.05 0.8 0.8 +0.07 ?0.05 1.00.05 0.150.05 43 12 (0.1) (bottom view) remark ( ) : reference value (top view) pin connections 1. drain 2. source 3. gate 4. source zr
NE3509M14 r09ds0011ej0100 rev.1.00 page 9 of 10 jan 21, 2011 recommended soldering conditions this product should be soldered and mounted under the following recommended conditions. for soldering methods and conditions other than those recommended below, contact your nearby sales office. soldering method soldering conditions condition symbol infrared reflow peak temperature (package surface temperature) : 260 c or below time at peak temperature : 10 seconds or less time at temperature of 220 c or higher : 60 seconds or less preheating time at 120 to 180 c : 120 30 seconds maximum number of reflow processes : 3 times maximum chlorine content of rosin flux (% mass) : 0.2% (wt.) or below ir260 partial heating peak temperature (package surface temperature) : 350 c or below soldering time (per side of device) : 3 seconds or less maximum chlorine content of rosin flux (% mass) : 0.2% (wt.) or below hs350 caution do not use different soldering methods together (except for partial heating).
NE3509M14 r09ds0011ej0100 rev.1.00 page 10 of 10 jan 21, 2011 caution gaas products this product uses gallium arsenide (gaas). gaas vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. ? follow related laws and ordinances when disposi ng of the product. if there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. commission a disposal company able to (with a license to) collect, tran sport and dispose of materials that contain arsenic and ot her such industrial waste materials. 2. exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subjec t to special control) up until final disposal. ? do not burn, destroy, cut, crush, or chemically dissolve the product. ? do not lick the product or in any way allow it to enter the mouth.
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history NE3509M14 data sheet description rev. date page summary 1.00 jan 21, 2011 ? first edition issued
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